Sapphire saxan sax ah oo warshadaysan
Sapphire waxay leedahay engegnaanta Mohs 9, oo ka xigta kaliya dheeman, oo waxay leedahay iska caabin wanaagsan. Isla mar ahaantaana, waxay leedahay xasillooni kiimiko oo heer sare ah waxayna iska caabin kartaa daxalka ku dhawaad walxaha acid iyo alkali kasta. Intaa waxaa dheer, iska caabinta heerkulka ugu badan ee sapphire waa 2060 ℃. Sababtoo ah faa'iidooyinka kor ku xusan ee sapphire, sapphire waxaa loo isticmaalaa qalabka iyo qalabka, taas oo si weyn u wanaajin karta nolosha adeegga waxayna u adkeysan kartaa jawiyo adag oo kala duwan.
Qaybaha saxda ah ee Sapphire waxay inta badan leeyihiin shuruudo qaabaysan iyo shuruudo xidhidh sax ah. Waxaan u habeyn karnaa qaabab kala duwan iyadoo loo eegayo sawirada macaamiisha. Waxaan leenahay qalab goynta saxda ah, shiididda, turxaan bixinta iyo tijaabinta qalabka si loo hubiyo in alaab kasta oo buuxisa shuruudaha adag ee macaamiisha.
Hababka Samaynta Muhiimka ah
Guryaha Alaabta
Sapphire waa oksijiin aluminium crystal ah (Al2O3). Waa mid ka mid ah qalabka ugu adag. Sapphire waxay leedahay sifooyin gudbin oo wanaagsan oo ka sarreeya kuwa muuqda, iyo u dhow spectrum IR. Waxay muujisaa awood farsamo oo sare, caabbinta kiimikaad, kulaylka kulaylka iyo xasilloonida kulaylka. Inta badan waxaa loo isticmaalaa sida alaabta daaqadaha meelo gaar ah sida tignoolajiyada meel bannaan oo xoqan ama caabbinta heerkulka sare loo baahan yahay.
| Qaanuunka molecular | Al2O3 |
| Cufnaanta | 3.95-4.1 g/cm3 |
| Dhismaha Crystal | Lattice saddex geesood ah |
| Dhismaha Crystal | a =4.758Å, c =12.991Å |
| Tirada molecules ee unugga unugga | 2 |
| Mohs Hardness | 9 |
| barta dhalaalaysa | 2050 ℃ |
| Barta Karsan | 3500 ℃ |
| Balaadhinta kulaylka | 5.8×10-6/K |
| Kuleylka Gaarka ah | 0.418 Ws/g/k |
| Habdhaqanka kulaylka | 25.12 W/m/k (@ 100℃) |
| Tusmada Dib-u-celinta | maya = 1.768 ne = 1.760 |
| dn/dt | 13x10 -6 /K(@633nm) |
| Gudbinta | T≈80% (0.3～5μm) |
| Dielectric Constant | 11.5(∥c), 9.3(⊥c) |
Qalooca Gudbinta ee daaqada indhaha ee Sapphire
